3BHL000986P3012 5SDD2545L0001 | ABB IGCT Module

VDRM:4500V
VRRM:4500V
Accuracy: ±1.5°C (0-150°C range)
Response time: <50ms Turn-off gain: >5 (typical)
Storage time: 3μs (max)
dV/dt capability: 6kV/μs (turn-off)
dI/dt capability: 2kA/μs (turn-on)
This asymmetric IGCT module represents ABB’s 4th-generation power semiconductor technology, featuring monolithically integrated free-wheeling diode and advanced buffer-layer design for superior dynamic performance in medium-voltage applications.